FDD5N50TM-WS

Teknik Özellikler

Power Dissipation Max

40W Tc

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Current Continuous Drain Id25

4A Tc

Terminal Kaplaması

Tin (Sn)

Rise Time

22ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

15nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

8 Weeks

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

13 ns

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1

Avalanche Energy Rating Eas

256 mJ

Terminal Sayısı

2

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Power Dissipation

40W

Vgs Max

±30V

Case Connection

DRAIN

Seri

UniFET™

Fet Type

N-Channel

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

1.4 Ω @ 2A, 10V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

640pF @ 25V

Turn Off Delay Time

28 ns

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Jedec95 Code

TO-252AA