FDD5690

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

30A Tc

Yükseklik

2.39mm

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

3.2W Ta 50W Tc

Direnç

27MOhm

Transistor Element Material

SILICON

Threshold Voltage

2.5V

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

1999

Avalanche Energy Rating Eas

90 mJ

Ambalaj

Tape & Reel (TR)

Genişlik

6.22mm

Radyasyon Dayanımı

No

Nominal Vgs

2.5 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

Parça Durumu

Active

Input Capacitance Ciss Max Vds

1110pF @ 25V

Turn Off Delay Time

24 ns

JESD-609 Kodu

e3

Case Connection

DRAIN

Terminal

SMD/SMT

Fet Type

N-Channel

Akım Değeri

30A

ECCN Kodu

EAR99

Continuous Drain Current Id

30A

Gate To Source Voltage Vgs

20V

Fall Time Typ

10 ns

Lifecycle Status

ACTIVE (Last Updated: 11 hours ago)

Rise Time

9ns

Voltage Rated Dc

60V

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

6V 10V

Uzunluk

6.73mm

Element Configuration

Single