FDD16AN08A0

Teknik Özellikler

Voltage Rated Dc

75V

Vgsth Max Id

4V @ 250μA

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

6V 10V

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Rise Time

54ns

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

47nC @ 10V

Turn On Delay Time

8 ns

Fabrika Tedarik Süresi

8 Weeks

Element Configuration

Single

Number Of Elements

1

Contact Plating

Tin

Terminal Sayısı

2

Power Dissipation

135W

Vgs Max

±20V

Seri

UltraFET™

Drain To Source Breakdown Voltage

75V

Rds On Max Id Vgs

16m Ω @ 50A, 10V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Pin Sayısı

3

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

135W Tc

Direnç

16MOhm

Current Continuous Drain Id25

9A Ta 50A Tc

Yükseklik

2.39mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Threshold Voltage

4V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING