FDD10N20LZTM

Teknik Özellikler

Rds On Max Id Vgs

360m Ω @ 3.8A, 10V

Drain To Source Breakdown Voltage

200V

Parça Durumu

Active

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

55 ns

Input Capacitance Ciss Max Vds

585pF @ 25V

JESD-609 Kodu

e3

Power Dissipation

56W

Vgs Max

±20V

Case Connection

DRAIN

Seri

UniFET™

Fet Type

N-Channel

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

Continuous Drain Current Id

7.6A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Fall Time Typ

25 ns

Jedec95 Code

TO-252AA

Pin Sayısı

3

Current Continuous Drain Id25

7.6A Tc

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Yükseklik

2.39mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

15ns

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

83W Tc

Vgsth Max Id

2.5V @ 250μA

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

5V 10V

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING