FDC658P

Teknik Özellikler

Current Continuous Drain Id25

4A Ta

Rds On Max Id Vgs

50m Ω @ 4A, 10V

Akım Değeri

-4A

Additional Feature

LOGIC LEVEL COMPATIBLE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.6W

Direnç

50mOhm

Radyasyon Dayanımı

No

Fet Type

P-Channel

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Continuous Drain Current Id

-4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

12nC @ 5V

Terminal Sayısı

6

Rise Time

14ns

Fall Time Typ

16 ns

Number Of Elements

1

Genişlik

1.7mm

Reach Svhc

No SVHC

ECCN Kodu

EAR99

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Turn Off Delay Time

24 ns

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Seri

PowerTrench®

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Power Dissipation Max

1.6W Ta

Voltage Rated Dc

-30V

Yükseklik

1.1mm

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

-30V

Input Capacitance Ciss Max Vds

750pF @ 15V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free