FDB8870

Teknik Özellikler

Transistor Application

SWITCHING

Weight

1.31247g

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

10 Weeks

Operating Mode

ENHANCEMENT MODE

Seri

PowerTrench®

Akım Değeri

160A

Drain To Source Breakdown Voltage

30V

Power Dissipation Max

160W Tc

Fet Type

N-Channel

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

132nC @ 10V

Power Dissipation

160W

Current Continuous Drain Id25

23A Ta 160A Tc

Drainsource On Resistancemax

0.0044Ohm

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

75 ns

Montaj Tipi

Surface Mount

Rise Time

98ns

Rds On Max Id Vgs

3.9m Ω @ 35A, 10V

Number Of Elements

1

Parça Durumu

Active

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Fall Time Typ

47 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Vgs Max

±20V

Terminal Formu

GULL WING

Vgsth Max Id

2.5V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Transistor Element Material

SILICON

Montaj

Surface Mount