FDB52N20TM

Teknik Özellikler

Number Of Elements

1

Rds On Max Id Vgs

49m Ω @ 26A, 10V

Contact Plating

Tin

Turn Off Delay Time

48 ns

Vgs Max

±30V

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

208A

Continuous Drain Current Id

52A

Case Connection

DRAIN

Transistor Element Material

SILICON

Nominal Vgs

5 V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

2900pF @ 25V

Turn On Delay Time

53 ns

Genişlik

10.16mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 22 hours ago)

Kurşunsuz Kodu

yes

Power Dissipation Max

357W Tc

Seri

UniFET™

Drain To Source Breakdown Voltage

200V

Power Dissipation

357W

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Number Of Channels

1

Rise Time

160ns

Montaj Tipi

Surface Mount

Direnç

49mOhm

Fall Time Typ

150 ns

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Terminal Sayısı

2