FDB42AN15A0-F085

Teknik Özellikler

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 250μA

Transistor Element Material

SILICON

Terminal Sayısı

2

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSSO-G2

Continuous Drain Current Id

35A

Montaj

Surface Mount

Turn On Delay Time

15 ns

Input Capacitance Ciss Max Vds

2040pF @ 25V

Avalanche Energy Rating Eas

78 mJ

Element Configuration

Single

Turn Off Delay Time

22 ns

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

42m Ω @ 12A, 10V

Rise Time

11ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

3 ns

Vgs Max

±20V

Gate Charge Qg Max Vgs

36nC @ 10V

Power Dissipation

150W

Drainsource On Resistancemax

0.042Ohm

Current Continuous Drain Id25

35A Tc

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight

1.31247g

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

150V

Seri

Automotive, AEC-Q101, PowerTrench®

Power Dissipation Max

150W Tc