FDB150N10

Teknik Özellikler

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

228A

Parça Durumu

Active

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

83 ns

Montaj Tipi

Surface Mount

Direnç

15MOhm

Turn Off Delay Time

86 ns

Number Of Elements

1

Rise Time

164ns

Rds On Max Id Vgs

15m Ω @ 49A, 10V

Element Configuration

Single

Input Capacitance Ciss Max Vds

4760pF @ 25V

Turn On Delay Time

47 ns

Vgsth Max Id

4.5V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Montaj

Surface Mount

Continuous Drain Current Id

57A

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

2

Transistor Element Material

SILICON

Power Dissipation Max

110W Tc

Fet Type

N-Channel

Seri

PowerTrench®

Drain To Source Breakdown Voltage

100V

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Kurşunsuz Kodu

yes

Weight

1.31247g

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

8 Weeks