Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgsth Max Id
- 4V @ 250μA
- Terminal Sayısı
- 2
- Montaj
- Surface Mount
- Jesd30 Code
- R-PSSO-G2
- Voltage Rated Dc
- 60V
- Yükseklik
- 4.83mm
- Element Configuration
- Single
- Avalanche Energy Rating Eas
- 470 mJ
- Montaj Tipi
- Surface Mount
- Direnç
- 5MOhm
- Rise Time
- 160ns
- Parça Durumu
- Active
- Drive Voltage Max Rds On Min Rds On
- 6V 10V
- Fall Time Typ
- 29 ns
- Gate Charge Qg Max Vgs
- 80nC @ 10V
- Current Continuous Drain Id25
- 18A Ta 80A Tc
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2013
- Weight
- 1.31247g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 10.67mm
- Fabrika Tedarik Süresi
- 9 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 80A
- Fet Type
- N-Channel
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 80A
- Case Connection
- DRAIN
- Input Capacitance Ciss Max Vds
- 3900pF @ 25V
- Turn On Delay Time
- 16 ns
- Turn Off Delay Time
- 28 ns
- Contact Plating
- Tin
- Rds On Max Id Vgs
- 5m Ω @ 80A, 10V
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Power Dissipation
- 245W
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