FDB047N10

Teknik Özellikler

Transistor Application

SWITCHING

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Genişlik

11.33mm

Seri

PowerTrench®

Drain To Source Breakdown Voltage

100V

Power Dissipation Max

375W Tc

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Power Dissipation

375W

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Turn Off Delay Time

344 ns

Rds On Max Id Vgs

4.7m Ω @ 75A, 10V

Number Of Elements

1

Pulsed Drain Currentmax Idm

656A

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Terminal Formu

GULL WING

Nominal Vgs

3.5 V

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

15265pF @ 25V

Turn On Delay Time

174 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

1.762g

Uzunluk

10.67mm

Fabrika Tedarik Süresi

8 Weeks

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

210nC @ 10V

Current Continuous Drain Id25

120A Tc

ECCN Kodu

EAR99

Yayın Yılı

2012