FDA59N30

Teknik Özellikler

Fabrika Tedarik Süresi

7 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Weight

6.401g

Kılıf / Paket

TO-3P-3, SC-65-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

JESD-609 Kodu

e3

Ambalaj

Tube

Drain To Source Breakdown Voltage

300V

Seri

UniFET™

Power Dissipation Max

500W Tc

Fet Type

N-Channel

Current Continuous Drain Id25

59A Tc

Gate Charge Qg Max Vgs

100nC @ 10V

Reach Svhc

No SVHC

Power Dissipation

500W

Yayın Yılı

2013

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Rds On Max Id Vgs

56m Ω @ 29.5A, 10V

Rise Time

575ns

Number Of Elements

1

Turn Off Delay Time

120 ns

Direnç

56MOhm

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

200 ns

Additional Feature

FAST SWITCHING

Vgs Max

±30V

Parça Durumu

Active

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Transistor Element Material

SILICON

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole