Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Parça Durumu
- Active
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fall Time Typ
- 230 ns
- Montaj Tipi
- Through Hole
- Rise Time
- 360ns
- Voltage Rated Dc
- 500V
- Yükseklik
- 19.9mm
- Element Configuration
- Single
- Threshold Voltage
- 5V
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin (Sn)
- Akım Değeri
- 48A
- Fet Type
- N-Channel
- Weight
- 6.401g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 15.6mm
- Fabrika Tedarik Süresi
- 17 Weeks
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2013
- Gate Charge Qg Max Vgs
- 137nC @ 10V
- Reach Svhc
- No SVHC
- Current Continuous Drain Id25
- 48A Tc
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Turn Off Delay Time
- 225 ns
- Rds On Max Id Vgs
- 105m Ω @ 24A, 10V
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 6460pF @ 25V
- Turn On Delay Time
- 105 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 48A
- Seri
- UniFET™
- Drain To Source Breakdown Voltage
- 500V
- Power Dissipation Max
- 625W Tc
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
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