FDA28N50F

Teknik Özellikler

Additional Feature

AVALANCHE RATED

Vgs Max

±30V

Pulsed Drain Currentmax Idm

112A

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Rds On Max Id Vgs

175m Ω @ 14A, 10V

Number Of Elements

1

Turn Off Delay Time

192 ns

Turn On Delay Time

67 ns

Input Capacitance Ciss Max Vds

5387pF @ 25V

HTS Kodu

8541.29.00.95

Transistor Element Material

SILICON

Continuous Drain Current Id

28A

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Ambalaj

Tube

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

500V

Seri

UniFET™

Power Dissipation Max

310W Tc

Genişlik

5mm

Transistor Application

SWITCHING

Kılıf / Paket

TO-3P-3, SC-65-3

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.175Ohm

Power Dissipation

310W

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

101 ns

Parça Durumu

Active

Rise Time

137ns

Montaj Tipi

Through Hole

Yükseklik

20.1mm

Element Configuration

Single

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Vgsth Max Id

5V @ 250μA