FDA28N50

Teknik Özellikler

Fabrika Tedarik Süresi

9 Weeks

Genişlik

5mm

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Weight

6.401g

Kılıf / Paket

TO-3P-3, SC-65-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.8mm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tube

Seri

UniFET™

Drain To Source Breakdown Voltage

500V

Power Dissipation Max

310W Tc

Fet Type

N-Channel

Current Continuous Drain Id25

28A Tc

Gate Charge Qg Max Vgs

105nC @ 10V

Power Dissipation

310W

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Rise Time

126ns

Rds On Max Id Vgs

155m Ω @ 14A, 10V

Number Of Elements

1

Turn Off Delay Time

210 ns

Contact Plating

Tin

Montaj Tipi

Through Hole

Direnç

155MOhm

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

110 ns

Vgs Max

±30V

Parça Durumu

Active

Pin Sayısı

2

Gate To Source Voltage Vgs

30V

Terminal Sayısı

3

Transistor Element Material

SILICON

Continuous Drain Current Id

28A

Montaj

Through Hole