FDA20N50-F109

Teknik Özellikler

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

59.5nC @ 10V

Power Dissipation

280W

Current Continuous Drain Id25

22A Tc

Drain To Source Breakdown Voltage

500V

Seri

UniFET™

Power Dissipation Max

280W Tc

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Ambalaj

Tube

Transistor Application

SWITCHING

Weight

6.401g

Kılıf / Paket

TO-3P-3, SC-65-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

4 Weeks

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

95 ns

Input Capacitance Ciss Max Vds

3120pF @ 25V

Element Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

5V @ 250μA

Transistor Element Material

SILICON

Terminal Sayısı

3

Montaj

Through Hole

Continuous Drain Current Id

22A

Parça Durumu

Active

Pulsed Drain Currentmax Idm

88A

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

105 ns

Vgs Max

±30V

Additional Feature

FAST SWITCHING

Turn Off Delay Time

100 ns

Montaj Tipi

Through Hole

Rds On Max Id Vgs

230m Ω @ 11A, 10V

Rise Time

375ns

Number Of Elements

1