FDA20N50F

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

22A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

3390pF @ 25V

Turn On Delay Time

45 ns

Turn Off Delay Time

100 ns

Contact Plating

Tin

Number Of Elements

1

Rds On Max Id Vgs

260m Ω @ 11A, 10V

Pin Sayısı

2

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

88A

Vgs Max

±30V

Power Dissipation

388W

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Kılıf / Paket

TO-3P-3, SC-65-3

Transistor Application

SWITCHING

Genişlik

5mm

Power Dissipation Max

388W Tc

Seri

UniFET™

Drain To Source Breakdown Voltage

500V

Ambalaj

Tube

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Kurşunsuz Kodu

yes

Vgsth Max Id

5V @ 250μA

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Terminal Sayısı

3

Element Configuration

Single

Yükseklik

20.1mm

Montaj Tipi

Through Hole

Direnç

260MOhm

Rise Time

120ns

Parça Durumu

Active

Fall Time Typ

60 ns

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

65nC @ 10V