FDA16N50-F109

Teknik Özellikler

Threshold Voltage

5V

Kurşunsuz Kodu

yes

Fall Time Typ

80 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

45nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Fet Type

N-Channel

Rds On Max Id Vgs

380m Ω @ 8.3A, 10V

Seri

UniFET™

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

16.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Power Dissipation

205W

Weight

6.401g

Pin Sayısı

3

Radyasyon Dayanımı

No

Vgsth Max Id

5V @ 250μA

Element Configuration

Single

Transistor Application

SWITCHING

Rise Time

150ns

Avalanche Energy Rating Eas

780 mJ

Terminal Kaplaması

TIN

Power Dissipation Max

205W Tc

Current Continuous Drain Id25

16.5A Tc

Pulsed Drain Currentmax Idm

66A

Reach Svhc

No SVHC

Kılıf / Paket

TO-3P-3, SC-65-3

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Turn Off Delay Time

65 ns

Additional Feature

AVALANCHE RATED

Drain To Source Breakdown Voltage

500V

Fabrika Tedarik Süresi

4 Weeks