FCU5N60TU

Teknik Özellikler

Gate Charge Qg Max Vgs

16nC @ 10V

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

12 ns

Pin Sayısı

3

Vgsth Max Id

5V @ 250μA

ECCN Kodu

EAR99

Akım Değeri

4.6A

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 3 days ago)

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

600V

Rds On Max Id Vgs

950m Ω @ 2.3A, 10V

Current Continuous Drain Id25

4.6A Tc

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Kodu

e3

Threshold Voltage

5V

Kurşunsuz Kodu

yes

Seri

SuperFET™

Power Dissipation

54W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

40ns

Drainsource On Resistancemax

0.95Ohm

Vgs Max

±30V

Continuous Drain Current Id

4.6A

Terminal Sayısı

3

Fet Type

N-Channel

Power Dissipation Max

54W Tc

Montaj

Through Hole

Gate To Source Voltage Vgs

30V

Weight

343.08mg

Turn Off Delay Time

47 ns

Voltage Rated Dc

600V

Element Configuration

Single

Fall Time Typ

22 ns

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

600pF @ 25V

Fabrika Tedarik Süresi

36 Weeks