FCPF9N60NT

Teknik Özellikler

Drain To Source Breakdown Voltage

600V

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Uzunluk

10.16mm

Rds On Max Id Vgs

385m Ω @ 4.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

29.8W Tc

Pulsed Drain Currentmax Idm

27A

Çalışma Sıcaklığı

-55°C~150°C TJ

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Number Of Elements

1

Weight

2.27g

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2013

Transistor Application

SWITCHING

Case Connection

ISOLATED

Jedec95 Code

TO-220AB

Ambalaj

Tube

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

29nC @ 10V

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3 Full Pack

Current Continuous Drain Id25

9A Tc

Drain Currentmax Abs Id

9A

Turn On Delay Time

12.7 ns

Element Configuration

Single

Yükseklik

15.9mm

Parça Durumu

Active

Rise Time

8.7ns

Vgs Max

±30V

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

30V

Fall Time Typ

10.2 ns

Genişlik

4.7mm