FCP4N60

Teknik Özellikler

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Fet Type

N-Channel

Nominal Vgs

5 V

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

16.51mm

Kurşunsuz Kodu

yes

Parça Durumu

Active

Fall Time Typ

30 ns

Yayın Yılı

2004

Element Configuration

Single

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Genişlik

4.83mm

Seri

SuperFET™

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

16 ns

Drain To Source Breakdown Voltage

600V

Terminal Kaplaması

Tin (Sn)

Dual Supply Voltage

600V

Uzunluk

10.67mm

Fabrika Tedarik Süresi

12 Weeks

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

16.6nC @ 10V

Power Dissipation Max

50W Tc

Input Capacitance Ciss Max Vds

540pF @ 25V

Rds On Max Id Vgs

1.2 Ω @ 2A, 10V

Continuous Drain Current Id

3.9A

Terminal

Through Hole

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Threshold Voltage

5V