FCP11N60N

Teknik Özellikler

Rds On Max Id Vgs

299m Ω @ 5.4A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

10.8A

Gate Charge Qg Max Vgs

35.6nC @ 10V

Input Capacitance Ciss Max Vds

1505pF @ 100V

Power Dissipation Max

94W Tc

ECCN Kodu

EAR99

Terminal Sayısı

3

Direnç

380MOhm

Vgsth Max Id

4V @ 250μA

Pin Sayısı

3

Rise Time

9.1ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Power Dissipation

94W

Transistor Application

SWITCHING

Threshold Voltage

2V

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Current Continuous Drain Id25

10.8A Tc

Ambalaj

Tube

Turn Off Delay Time

42 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Yükseklik

15.9mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

600V

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

13.6 ns

Drive Voltage Max Rds On Min Rds On

10V