FCH077N65F-F155

Teknik Özellikler

Direnç

77mOhm

Gate To Source Voltage Vgs

30V

Drain To Source Breakdown Voltage

650V

Input Capacitance Ciss Max Vds

7109pF @ 100V

Turn Off Delay Time

113 ns

Gate Charge Qg Max Vgs

164nC @ 10V

Terminal Kaplaması

Tin (Sn)

Number Of Channels

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-247-3

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

5V @ 5.4mA

Weight

6.39g

Seri

FRFET®, SuperFET® II

Power Dissipation Max

481W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tube

Jesd30 Code

R-PSFM-T3

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

54A

Current Continuous Drain Id25

54A Tc

Rds On Max Id Vgs

77m Ω @ 27A, 10V

Rise Time

35ns

Montaj

Through Hole

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-247AB

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

5 ns

Fabrika Tedarik Süresi

15 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Element Configuration

Single