FCH072N60

Teknik Özellikler

Current Continuous Drain Id25

52A Tc

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Vgsth Max Id

3.5V @ 250μA

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

125nC @ 10V

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

5890pF @ 380V

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

481W Tc

Continuous Drain Current Id

52A

Rise Time

23ns

Weight

6.39g

Jesd30 Code

R-PSFM-T3

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Seri

SuperFET® II

Drainsource On Resistancemax

0.072Ohm

Montaj Tipi

Through Hole

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

TO-247AB

Number Of Elements

1

Turn On Delay Time

33 ns

Transistor Element Material

SILICON

Fet Type

N-Channel

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

97 ns

Number Of Channels

1

Vgs Max

±20V