FCH041N65F-F155

Teknik Özellikler

Input Capacitance Ciss Max Vds

13020pF @ 100V

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

294nC @ 10V

Gate To Source Voltage Vgs

30V

Vgsth Max Id

5V @ 7.6mA

Fabrika Tedarik Süresi

12 Weeks

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Current Continuous Drain Id25

76A Tc

Ambalaj

Tube

Montaj

Through Hole

Direnç

44mOhm

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Weight

6.39g

Terminal Sayısı

3

Jesd30 Code

R-PSFM-T3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

76A

Drain To Source Voltage Vdss

650V

Rise Time

47ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

595W Tc

Fet Type

N-Channel

Ds Breakdown Voltagemin

650V

Pulsed Drain Currentmax Idm

228A

Number Of Elements

1

Turn On Delay Time

60 ns

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

TO-247AB

Seri

FRFET®, SuperFET® II

Montaj Tipi

Through Hole

Terminal Kaplaması

Tin (Sn)

Element Configuration

Single

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

6.5 ns

Avalanche Energy Rating Eas

2025 mJ