FCD9N60NTM

Teknik Özellikler

Yayın Yılı

2004

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Continuous Drain Current Id

9A

Uzunluk

6.73mm

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

12.7 ns

Turn Off Delay Time

28.7 ns

Gate Charge Qg Max Vgs

17.8nC @ 10V

Terminal Kaplaması

Tin (Sn)

Rise Time

9.6ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Seri

SupreMOS™

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

1000pF @ 100V

Current Continuous Drain Id25

9A Tc

Rds On Max Id Vgs

385m Ω @ 4.5A, 10V

Montaj

Surface Mount

Gate To Source Voltage Vgs

30V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±30V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Drain To Source Breakdown Voltage

600V

Reach Svhc

No SVHC

Number Of Elements

1

Power Dissipation

92.6W

Pulsed Drain Currentmax Idm

27A

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6.22mm

Element Configuration

Single