FCD850N80Z

Teknik Özellikler

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Kaplaması

Tin (Sn)

Rise Time

10ns

Gate Charge Qg Max Vgs

29nC @ 10V

Fet Type

N-Channel

Fabrika Tedarik Süresi

13 Weeks

Weight

260.37mg

ECCN Kodu

EAR99

Turn Off Delay Time

40 ns

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Element Configuration

Single

Turn On Delay Time

16 ns

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4.5V @ 600μA

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Continuous Drain Current Id

6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

800V

Parça Durumu

Active

Power Dissipation Max

75W Tc

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

245

Drive Voltage Max Rds On Min Rds On

10V

Seri

SuperFET® II

Fall Time Typ

4.5 ns

Rds On Max Id Vgs

850m Ω @ 3A, 10V

Current Continuous Drain Id25

6A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1315pF @ 100V