FCD620N60ZF

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Vgs Max

±20V

Seri

HiPerFET™, Polar™

Rds On Max Id Vgs

620m Ω @ 3.6A, 10V

Current Continuous Drain Id25

7.3A Tc

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

1135pF @ 25V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Drain To Source Breakdown Voltage

600V

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Uzunluk

6.73mm

Turn On Delay Time

15 ns

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2013

Continuous Drain Current Id

7.3A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Kaplaması

Tin (Sn)

Rise Time

7ns

Gate Charge Qg Max Vgs

36nC @ 10V

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

14 Weeks

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.62Ohm

Turn Off Delay Time

35 ns

Yükseklik

6.22mm

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

10 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Channels

1

Temel Parça No

FCD620N60

Power Dissipation Max

89W Tc

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Sayısı

2

Element Configuration

Single