FCB199N65S3

Teknik Özellikler

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

30

Vgs Max

±30V

Case Connection

DRAIN

Seri

SuperFET® III

Input Capacitance Ciss Max Vds

1225pF @ 400V

JESD-609 Kodu

e3

Rds On Max Id Vgs

199m Ω @ 7A, 10V

Parça Durumu

Active

Weight

1.31247g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Drain To Source Voltage Vdss

650V

Ds Breakdown Voltagemin

650V

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

14A

Tepe Reflow Sıcaklığı (°C)

245

Vgsth Max Id

4.5V @ 1.4mA

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

98W Tc

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.199Ohm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Current Continuous Drain Id25

14A Tc

RoHS Durumu

RoHS Compliant

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

30nC @ 10V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

35A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Terminal Sayısı

2

Avalanche Energy Rating Eas

76 mJ

Number Of Elements

1

Element Configuration

Single