FCB110N65F

Teknik Özellikler

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

105A

Avalanche Energy Rating Eas

809 mJ

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

35A Tc

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

357W Tc

Ds Breakdown Voltagemin

650V

Continuous Drain Current Id

35A

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

20V

HTS Kodu

8541.29.00.95

Fall Time Typ

5.7 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

1.31247g

Parça Durumu

Active

Input Capacitance Ciss Max Vds

4895pF @ 100V

Turn Off Delay Time

89 ns

JESD-609 Kodu

e3

Case Connection

DRAIN

Fet Type

N-Channel

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

145nC @ 10V

Turn On Delay Time

31 ns

Fabrika Tedarik Süresi

13 Weeks

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Drainsource On Resistancemax

0.11Ohm

Rise Time

21ns

Vgsth Max Id

5V @ 3.5mA

Drive Voltage Max Rds On Min Rds On

10V