FCA20N60-F109

Teknik Özellikler

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

98nC @ 10V

Temel Parça No

FCA20N60

Ambalaj

Tube

Turn On Delay Time

62 ns

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

60A

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

690 mJ

Terminal Sayısı

3

Power Dissipation Max

208W Tc

Direnç

190MOhm

Vgsth Max Id

5V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

20A Tc

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 1 day ago)

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

140ns

Terminal Kaplaması

MATTE TIN

Gate To Source Voltage Vgs

30V

Kurşunsuz

Lead Free

Montaj

Through Hole

Kılıf / Paket

TO-3P-3, SC-65-3

Pin Sayısı

3

Fall Time Typ

65 ns

Kurşunsuz Kodu

yes

Continuous Drain Current Id

20A

Power Dissipation

208W

Vgs Max

±30V

Seri

SuperFET™

Fet Type

N-Channel

Drain To Source Breakdown Voltage

600V

Rds On Max Id Vgs

190m Ω @ 10A, 10V

Weight

6.401g

Nem Hassasiyeti (MSL)

1 (Unlimited)