ATP114-TL-H

Teknik Özellikler

Power Dissipation

60W

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Rds On Max Id Vgs

16m Ω @ 28A, 10V

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Çalışma Sıcaklığı

150°C TJ

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

4V 10V

Power Dissipation Max

60W Tc

Terminal Formu

GULL WING

Kılıf / Paket

ATPAK (2 leads+tab)

Parça Durumu

Active

Input Capacitance Ciss Max Vds

4000pF @ 20V

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

92nC @ 10V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

JESD-609 Kodu

e6

Element Configuration

Single

Case Connection

DRAIN

Pin Sayısı

3

Turn On Delay Time

19 ns

Yayın Yılı

2010

Halogen Free

Halogen Free

Continuous Drain Current Id

55A

Kurşunsuz

Lead Free

Vgs Max

±20V

Fet Type

P-Channel

Turn Off Delay Time

450 ns

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

60V

Rise Time

200ns

Fall Time Typ

300 ns

Current Continuous Drain Id25

55A Ta

Gate To Source Voltage Vgs

20V