2SJ652

Teknik Özellikler

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

80nC @ 10V

Transistor Element Material

SILICON

Current Continuous Drain Id25

28A Ta

Rds On Max Id Vgs

38m Ω @ 14A, 10V

Continuous Drain Current Id

28A

Power Dissipation

30W

RoHS Durumu

RoHS Compliant

Terminal Sayısı

3

HTS Kodu

8541.29.00.95

Operating Mode

DEPLETION MODE

Parça Durumu

Obsolete

Drain To Source Voltage Vdss

60V

Pin Sayısı

3

Jedec95 Code

TO-220AB

Pulsed Drain Currentmax Idm

112A

Montaj

Through Hole

Power Dissipation Max

2W Ta 30W Tc

Case Connection

ISOLATED

Number Of Elements

1

Drainsource On Resistancemax

0.0555Ohm

Yayın Yılı

2003

Element Configuration

Single

Kurşunsuz

Lead Free

Turn On Delay Time

33 ns

Fet Type

P-Channel

Ambalaj

Bulk

Kurşunsuz Kodu

yes

Turn Off Delay Time

310 ns

Pin Sayısı

3

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4V 10V

Çalışma Sıcaklığı

150°C TJ

Vgs Max

±20V

Terminal Kaplaması

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Input Capacitance Ciss Max Vds

4360pF @ 20V

Montaj Tipi

Through Hole

Kılıf / Paket

TO-220-3 Full Pack

Nem Hassasiyeti (MSL)

1 (Unlimited)