MTB10N40ET4

Teknik Özellikler

Moisture Sensitivity Levels

NOT SPECIFIED

JESD-609 Kodu

e0

Pulsed Drain Currentmax Idm

40 A

Avalanche Energy Rating Eas

520 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

Manufacturer Package Code

CASE 418B-02

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Yüzey Montaj

YES

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Üretici Parça No

MTB10N40ET4

REACH Uyumluluk Kodu

unknown

Case Connection

DRAIN

Drain Currentmax Id

10 A

Terminal Kaplaması

TIN LEAD

Package Description

CASE 418B-02, D2PAK-3

Drainsource On Resistancemax

0.55 Ω

Ürün Durumu

Active

Part Life Cycle Code

Active

Jesd30 Code

R-PSSO-G2

Additional Feature

AVALANCHE RATED

Ds Breakdown Voltagemin

400 V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Risk Rank

5.35

Pin Sayısı

3

Terminal Formu

GULL WING

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Reflow Temperaturemax S

NOT SPECIFIED

Transistor Element Material

SILICON

Paket

Bulk

Polaritychannel Type

N-CHANNEL

Rohs Code

No

Number Of Terminals

2

Kurşunsuz Kodu

No

Qualification Status

COMMERCIAL