BUK962R5-60E

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

655 mJ

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reference Standard

AEC-Q101; IEC-60134

Rohs Code

Yes

Pulsed Drain Currentmax Idm

1019 A

Drainsource On Resistancemax

0.0025 Ω

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Package Description

SMALL OUTLINE, R-PSSO-G2

Part Life Cycle Code

Active

Case Connection

DRAIN

Moisture Sensitivity Levels

1

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Package Shape

RECTANGULAR

Reflow Temperaturemax S

NOT SPECIFIED

JESD-609 Kodu

e3

Risk Rank

5.38

Ihs Manufacturer

NEXPERIA

Drain Currentmax Id

120 A

Number Of Terminals

2

Package Style

SMALL OUTLINE

Üretici Parça No

BUK962R5-60E

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Terminal Kaplaması

Tin (Sn)

Package Body Material

PLASTIC/EPOXY

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Yüzey Montaj

YES

Ds Breakdown Voltagemin

60 V