2N7002P,215

Teknik Özellikler

Gate Charge Qg Vgs

0.8nC @ 4.5V

Power Dissipation Max

350mW Ta

ECCN Kodu

EAR99

RoHS

Lead free / RoHS Compliant

Input Capacitance Ciss Max Vds

50pF @ 10V

Pin Sayısı

3

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

HTS Kodu

8541.21.00.75

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Sayısı

3

Pcn Designspecification

Resin Hardener 02/Jul/2013

Vgsth Max Id

2.4V @ 250碌A

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Vds

50pF @ 10V

Online Catalog

N-Channel Logic Level Gate FETs

Rds On Max Id Vgs

1.6 Ohm @ 500mA, 10V

Pcn Packaging

Lighter Reels 02/Jan/2014

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Fet Feature

Logic Level Gate

Power Max

350mW

Tedarikçi Cihaz Paketi

SOT-23 (TO-236AB)

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Drain To Source Voltage Vdss

60V

Family

FETs - Single

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

360mA (Ta)

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Fet Type

MOSFET N-Channel, Metal Oxide