NTE2392

Teknik Özellikler

Ds Breakdown Voltagemin

100 V

Drain To Source Resistance

55 mΩ

Tip

Power MOSFET

Polarity

N

Reach Svhc

Unknown

Rad Hardened

No

Rds On Max Id Vgs

55mOhm @ 20A, 10V

Technology

MOSFET (Metal Oxide)

Ürün Durumu

Active

Package Shape

ROUND

Power Dissipation Max

150W (Tc)

Pin Sayısı

2 +Tab

Threshold Voltage

4 V

Gate Charge Qg Max Vgs

120 nC @ 10 V

Polaritychannel Type

N-CHANNEL

Power Dissipationmax Abs

125 W

Number Of Elements

1

Tedarikçi Cihaz Paketi

TO-3

Paket

Bag

Terminal Formu

PIN/PEG

Pulsed Drain Currentmax Idm

160 A

Power Dissipation Ambientmax

150 W

Min. Çalışma Sıcaklığı

-55 °C

Turnoff Timemax Toff

225 ns

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

32 A

Transistor Application

SWITCHING

Part Life Cycle Code

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Mounting

Through Hole

Drainsource On Resistancemax

0.055 Ω

Element Configuration

Single

Operating Temperature Classification

Military

RoHS

Non-Compliant

Package Style

FLANGE MOUNT

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99