Adet bazlı fiyat
- 1+ adet$0.96
- 10+ adet$0.91
- 100+ adet$0.86
- 500+ adet$0.81
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Dissipation
- 34W
- Transistor Element Material
- SILICON
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 44A
- Contact Plating
- Tin
- Max Dual Supply Voltage
- 30V
- Turn On Delay Time
- 13 ns
- Case Connection
- DRAIN
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 30V
- Jedec95 Code
- MO-235
- Turn Off Delay Time
- 15 ns
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Terminal Pozisyonu
- SINGLE
- Fet Type
- N-Channel
- Terminal Formu
- GULL WING
- Rds On Max Id Vgs
- 9.8m Ω @ 15A, 10V
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 4
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2015
- Current Continuous Drain Id25
- 44A Tc
- Number Of Elements
- 1
- Parça Durumu
- Active
- Rise Time
- 8.8ns
- Vgsth Max Id
- 1.95V @ 1mA
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Avalanche Energy Rating Eas
- 9 mJ
- Power Dissipation Max
- 34W Tc
- Fall Time Typ
- 4.7 ns
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 4
- Pin Sayısı
- 4
- Gate Charge Qg Max Vgs
- 10.4nC @ 10V
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