PSMN9R5-100BS,118

Teknik Özellikler

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Drain To Source Breakdown Voltage

90V

Transistor Application

SWITCHING

Vgs Max

±20V

Turn Off Delay Time

52.2 ns

Terminal Formu

GULL WING

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Power Dissipation

211W

Gate To Source Voltage Vgs

20V

Turn On Delay Time

22 ns

Max Dual Supply Voltage

100V

Continuous Drain Current Id

89A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

4454pF @ 50V

Pin Sayısı

3

Gate Charge Qg Max Vgs

82nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Yüzey Montaj

YES

Drainsource On Resistancemax

0.0096Ohm

JESD-609 Kodu

e3

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

9.6m Ω @ 15A, 10V

Ambalaj

Tape & Reel (TR)

Rise Time

25.2ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

89A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2012

Drive Voltage Max Rds On Min Rds On

10V