PSMN8R7-80BS,118

Teknik Özellikler

Radyasyon Dayanımı

No

Pin Sayısı

3

Input Capacitance Ciss Max Vds

3346pF @ 40V

Pin Sayısı

3

Gate Charge Qg Max Vgs

52nC @ 10V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Yüzey Montaj

YES

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0087Ohm

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Rds On Max Id Vgs

8.7m Ω @ 10A, 10V

Ambalaj

Tape & Reel (TR)

Rise Time

26ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

90A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2012

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 1mA

Fabrika Tedarik Süresi

12 Weeks

Power Dissipation Max

170W Tc

Fall Time Typ

20 ns

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Drain To Source Breakdown Voltage

73V

Vgs Max

±20V

Transistor Application

SWITCHING

Turn Off Delay Time

46 ns

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Power Dissipation

170W

Gate To Source Voltage Vgs

20V