PSMN7R6-100BSEJ

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Drain To Source Breakdown Voltage

100V

Transistor Application

SWITCHING

Vgs Max

±20V

Turn Off Delay Time

82 ns

Terminal Formu

GULL WING

Fet Type

N-Channel

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Element Configuration

Single

Turn On Delay Time

31 ns

Number Of Channels

1

Max Dual Supply Voltage

100V

Continuous Drain Current Id

75A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Input Capacitance Ciss Max Vds

7110pF @ 50V

Gate Charge Qg Max Vgs

128nC @ 10V

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Yüzey Montaj

YES

Drainsource On Resistancemax

0.0076Ohm

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

7.6m Ω @ 25A, 10V

Weight

3.949996g

Parça Durumu

Active

Rise Time

48ns

Number Of Elements

1

Current Continuous Drain Id25

75A Tj

Yayın Yılı

2012

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

4V @ 1mA

Fall Time Typ

47 ns