PSMN7R5-60YLX

Teknik Özellikler

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Surface Mount

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Jedec95 Code

MO-235

Jesd30 Code

R-PSSO-G4

Ds Breakdown Voltagemin

60V

Continuous Drain Current Id

86A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

SC-100, SOT-669

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Reference Standard

IEC-60134

Drainsource On Resistancemax

0.0087Ohm

Pin Sayısı

4

Gate Charge Qg Max Vgs

31nC @ 5V

Input Capacitance Ciss Max Vds

4570pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

2.1V @ 1mA

Drive Voltage Max Rds On Min Rds On

5V 10V

Power Dissipation Max

147W Tc

Avalanche Energy Rating Eas

76.5 mJ

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

7.5m Ω @ 20A, 10V

Terminal Sayısı

4

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2015

Drain To Source Voltage Vdss

60V

Pulsed Drain Currentmax Idm

346A

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

86A Tc