PSMN6R3-120PS

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Power Dissipation

405W

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

260

Turn On Delay Time

42.1 ns

Max Dual Supply Voltage

120V

Continuous Drain Current Id

70A

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Jedec95 Code

TO-220AB

Drain To Source Breakdown Voltage

120V

Reach Svhc

No SVHC

Transistor Application

SWITCHING

Vgs Max

±20V

Turn Off Delay Time

142.1 ns

Threshold Voltage

3V

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Sayısı

3

Montaj Tipi

Through Hole

Ambalaj

Tube

Rds On Max Id Vgs

6.7m Ω @ 25A, 10V

Pulsed Drain Currentmax Idm

280A

Rise Time

58.2ns

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

70A Tc

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Süresi (maks. sn)

30

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

4V @ 1mA

Fall Time Typ

67.7 ns

Power Dissipation Max

405W Tc

Pin Sayısı

3