Adet bazlı fiyat
- 1+ adet$2.14
- 10+ adet$2.02
- 100+ adet$1.91
- 500+ adet$1.80
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Gate To Source Voltage Vgs
- 20V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Power Dissipation
- 338W
- Max Dual Supply Voltage
- 100V
- Turn On Delay Time
- 45 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 120A
- Jedec95 Code
- TO-220AB
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 100V
- Case Connection
- DRAIN
- RoHS Durumu
- ROHS3 Compliant
- Terminal Pozisyonu
- SINGLE
- Fet Type
- N-Channel
- Terminal Kaplaması
- Tin (Sn)
- Vgs Max
- ±20V
- Transistor Application
- SWITCHING
- Turn Off Delay Time
- 122 ns
- Current Continuous Drain Id25
- 120A Tc
- Number Of Elements
- 1
- Rise Time
- 91ns
- Parça Durumu
- Active
- Pulsed Drain Currentmax Idm
- 680A
- Yayın Yılı
- 2011
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Rds On Max Id Vgs
- 5m Ω @ 25A, 10V
- Ambalaj
- Tube
- Power Dissipation Max
- 338W Tc
- Fall Time Typ
- 63 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Vgsth Max Id
- 4V @ 1mA
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 9900pF @ 50V
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
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