PSMN4R8-100PSEQ

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Jedec95 Code

TO-220AB

Jesd30 Code

R-PSFM-T3

Transistor Application

SWITCHING

Vgs Max

±20V

Montaj

Through Hole

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

100V

Continuous Drain Current Id

120A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Gate Charge Qg Max Vgs

278nC @ 10V

Input Capacitance Ciss Max Vds

14400pF @ 50V

Kılıf / Paket

TO-220-3

Operating Mode

ENHANCEMENT MODE

Reference Standard

IEC-60134

Drainsource On Resistancemax

0.005Ohm

Ambalaj

Tube

Rds On Max Id Vgs

5m Ω @ 25A, 10V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~175°C TJ

Drain To Source Voltage Vdss

100V

Pulsed Drain Currentmax Idm

693A

Current Continuous Drain Id25

120A Tj

Parça Durumu

Active

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

4V @ 1mA

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

405W Tc

Avalanche Energy Rating Eas

542 mJ