Adet bazlı fiyat
- 1+ adet$3.33
- 10+ adet$3.14
- 100+ adet$2.96
- 500+ adet$2.79
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 4.6m Ω @ 25A, 10V
- Yayın Yılı
- 2012
- Input Capacitance Ciss Max Vds
- 4426pF @ 30V
- Max Dual Supply Voltage
- 60V
- Pulsed Drain Currentmax Idm
- 565A
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 100A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Turn On Delay Time
- 26 ns
- Drain To Source Breakdown Voltage
- 60V
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation Max
- 211W Tc
- Gate Charge Qg Max Vgs
- 70.8nC @ 10V
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Rise Time
- 24ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.0046Ohm
- Fall Time Typ
- 22 ns
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Jedec95 Code
- TO-220AB
- Power Dissipation
- 211W
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 4V @ 1mA
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