PSMN4R6-60BS,118

Teknik Özellikler

Montaj Tipi

Surface Mount

Rise Time

24ns

Parça Durumu

Active

Terminal Sayısı

2

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

70.8nC @ 10V

Pin Sayısı

3

Power Dissipation Max

211W Tc

Number Of Elements

1

Element Configuration

Single

JESD-609 Kodu

e3

Vgs Max

±20V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

60V

Turn On Delay Time

26 ns

Current Continuous Drain Id25

100A Tc

Yüzey Montaj

YES

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

12 Weeks

Max Dual Supply Voltage

60V

Pulsed Drain Currentmax Idm

565A

Input Capacitance Ciss Max Vds

4426pF @ 30V

Yayın Yılı

2012

Rds On Max Id Vgs

4.4m Ω @ 25A, 10V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

100A

Turn Off Delay Time

58 ns

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Vgsth Max Id

4V @ 1mA

Transistor Element Material

SILICON

Power Dissipation

211W

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Avalanche Energy Rating Eas

266 mJ

Ambalaj

Tape & Reel (TR)