PSMN4R4-30MLC,115

Teknik Özellikler

Turn On Delay Time

12.6 ns

Drain To Source Breakdown Voltage

30V

Kılıf / Paket

SOT-1210, 8-LFPAK33

Power Dissipation Max

69W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

23nC @ 10V

Pin Sayısı

8

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

23.2ns

Parça Durumu

Active

Terminal Sayısı

4

Transistor Application

SWITCHING

Continuous Drain Current Id

70A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2012

Rds On Max Id Vgs

4.65m Ω @ 25A, 10V

Input Capacitance Ciss Max Vds

1515pF @ 15V

Pulsed Drain Currentmax Idm

363A

Max Dual Supply Voltage

30V

Fabrika Tedarik Süresi

26 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

R-PSSO-G4

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

70A Tc

Power Dissipation

69W

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Reference Standard

IEC-60134

Vgsth Max Id

2.15V @ 1mA

Contact Plating

Tin

Fet Type

N-Channel

Turn Off Delay Time

16 ns

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No