Adet bazlı fiyat
- 1+ adet$4.45
- 10+ adet$4.20
- 100+ adet$3.96
- 500+ adet$3.74
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pin Sayısı
- 3
- Weight
- 453.59237mg
- Parça Durumu
- Active
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time
- 28 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 100A Tc
- Case Connection
- DRAIN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 4.3m Ω @ 15A, 10V
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Fall Time Typ
- 21 ns
- Gate Charge Qg Max Vgs
- 41.5nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Uzunluk
- 31.75mm
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Rise Time
- 58ns
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- TO-220-3
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Power Dissipation Max
- 103W Tc
- Number Of Elements
- 1
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Yüzey Montaj
- NO
- Continuous Drain Current Id
- 100A
- Yayın Yılı
- 2009
- Pulsed Drain Currentmax Idm
- 465A
- Input Capacitance Ciss Max Vds
- 2400pF @ 12V
- Max Dual Supply Voltage
- 30V
- Vgsth Max Id
- 2.15V @ 1mA
- Turn Off Delay Time
- 44 ns
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