Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Contact Plating
- Tin
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 122 ns
- Jedec95 Code
- TO-220AB
- Power Dissipation
- 338W
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 63 ns
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Rise Time
- 91ns
- Montaj Tipi
- Through Hole
- Drain To Source Breakdown Voltage
- 100V
- Turn On Delay Time
- 45 ns
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation Max
- 338W Tc
- Kılıf / Paket
- TO-220-3
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 120A Tc
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rds On Max Id Vgs
- 4.3m Ω @ 25A, 10V
- Yayın Yılı
- 2011
- Continuous Drain Current Id
- 120A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Max Dual Supply Voltage
- 100V
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